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Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

机译:非极性m面alGaN / GaN量子阱中的太赫兹子带间吸收   井

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摘要

We demonstrate THz intersubband absorption (15.6-26.1 meV) in m-planeAlGaN/GaN quantum wells. We find a trend of decreasing peak energy withincreasing quantum well width, in agreement with theoretical expectations.However, a blue-shift of the transition energy of up to 14 meV was observedrelative to the calculated values. This blue-shift is shown to decrease withdecreasing charge density and is therefore attributed to many-body effects.Furthermore, a ~40% reduction in the linewidth (from roughly 8 to 5 meV) wasobtained by reducing the total sheet density and inserting undoped AlGaN layersthat separate the wavefunctions from the ionized impurities in the barriers.
机译:我们证明了m平面AlGaN / GaN量子阱中的THz子带间吸收(15.6-26.1 meV)。我们发现在增加量子阱宽度的过程中峰值能量下降的趋势符合理论预期,但是相对于计算值,观察到跃迁能量的蓝移高达14 meV。蓝移随电荷密度的增加而减小,因此归因于多体效应。此外,通过降低总片材密度并插入未掺杂的AlGaN,线宽减小了约40%(从大约8 meV降低到5 meV)。将波函数与势垒中的电离杂质分开的层

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